The beamline BL11U is equipped with an in-vacuum undulator with an energy coverage range of 36-600 eV and a resolving power (E/ΔE) of 5400@244.4 eV. This system is comprised of four ultrahigh vacuum (UHV) chambers including analysis chamber, preparation chamber, molecular beam epitaxy (MBE) chamber, a radial distribution chamber and a loadlock chamber, integrating multiple surface analysis techniques. It provides a powerful research platform for the study of the surface structure and catalytic mechanism of solid catalysts, the electronic structure of the surface and interface of semiconductor materials, the electronic structure of surface self-assembled molecules, and the electronic structure of nanomaterials.
| Radiation Source: Undulator | Energy Range: 36-600 eV |
| Resolution (E/△E): 5400 @244.4 eV | Photon flux of the sample: 1 ´ 1010 photons/s/300 mA@244.4 eV |
| Beam sizes at sample: 0.8 ´ 0.4 mm2 | Resolution of the endstation: 6.1 ± 2.0 meV |
Electronic structure surface analysis platform with multiple technologies including XPS, UPS, SRPES, NEXAFS, TPD and LEED.
Sample processing conditions including sputtering, 90 K~1500 K and evaporation.
Detailed Introduction: