Inspired by their unique electrical, optical, and mechanical properties, graphene-based materials have aroused considerable interest and numerous expectations as extraordinary components in nanoelectronics, sensors, and others devices. These characters render them promising candidates to replace traditional silicon, ITO, metal, gold, or organic film-based materials in the next generation of high-performance nanoelectronics. Practically, to fulfill the promise of graphene-involved nanoelectronics, one of the most indispensable prerequisites is the controllable integration of graphene based materials to produce ultrathin films over large-area surface. Recently, Prof. Minghua Liu’s group of Institute of Chemistry, CAS successfully prepared high quality graphene oxide (GO)-based multilayered films over large area solid surface by means of a covalent-based layer-by layer (LBL) strategy. Significantly, compared with those assembled in terms of the electrostatic interaction based conventional noncovalent LBL method, the current covalent films display much higher stability and reproducibility. Moreover, they fabricated OFETs integrated with the covalent reduced graphene oxide (RGO) films as efficient source/drain electrodes, instead of the traditional Au electrodes. A thickness-dependent electrical performance is realized. When the number of bilayers of RGO film exceeds 2, the OFETs display higher electric performance than those based on Au electrodes. Under the cooperation with the staff of the Surface Physics Endstation of NSRL, USTC, they revealed the electronic structures at the RGO/CuPc/RGO and Au/CuPc/Au interfaces by means of the advanced synchrotron radiation (SR) photoemission techniques. The high electrical performance is found to be attributed to their relatively lower contact resistance, which is resulted from their lower hole-injection barriers. In this work, the SR-based techniques are successfully applied in the real model devices and manifest unique advantages in investigating the structures and properties of materials as well as the interfacial electronic structures therein, thus contributing significantly to the realization of the structure-function relationships in real devices. This work has been published as an article in the Advanced Functional Materials journal (Adv. Funct. Mater. 2013, 23, 2422).QQ截图20141021162446.jpg