Detail:

Abstract
Research and developments on wide energy pap GaN, SiC and ZnO based semiconductors, related materials/quantum structures are very active in recent years. GaN-based quantum structural materials are promising for energy-saving and environmentally friendly solid-state light sources [1], SiC is recognizing as the 21th century power semiconductor [2] and ZnO is expecting to play an important role for next generation optoelectronic and electronic devices [3]. Other advanced optoelectronic/electronic oxides, III-V, II-VI & nano-materials are also in great processing.
We have in recent years employed advanced synchrotron radiation (SR) X-ray absorption spectroscopy (XAS) and SR-XRD, using various SR beam-lines from Hsingchu SR facilities, in combined with XPS, Rutherford backscattering (RBS), Raman scattering, photoluminescence and other characterization techniques, to study these materials, nano-structures and devices. We review and report on our recent some attractive/significant results, such as,
“Surface chemical and local electronic properties of AlxGa1-xN epi-layers grown by MOCVD”, Optics Express 22, 17440-7 (2014); “Extended x-ray absorption fine structure and micro-Raman spectra of Bridgman grown Cd1-xZnxTe ternary alloys”, Materials Research Express 1, 015018 (pp.13) (2014); “Lattice deformation of wurtzite MgxZn1−xO alloys: An extended X-ray absorption fine structure study”, J. Alloys & Compounds, 582, 157–160 (2014); “Tunable ferromagnetic behavior in Cr doped ZnO nanorod arrays through defect engineering”, J. Mater. Chem. C, 2, 2992-7 (2014); “Structural and dynamical properties of Bridgeman grown CdSexTe1-x (0 < x ≤ 0.35) ternary alloys”, Phys. Rev. B. 87, p165208 (12pp) (2013); “Bond lengths and lattice structure of InP0.52Sb0.48 grown on GaAs”, Appl. Phys. Lett. 101, 091902 (2012); “X-ray absorption and Raman study of GaN films grown on different substrates by different techniques”, Thin Solid Films 518, 7475-9 (2010).
We would like also to report/discuss some others: “Ferromagnetic and photoluminescence properties of Cu-doped ZnO nanorods by radio frequency magnetron sputtering”, Mat. Chem. Phys. 139, 506-510 (2013); “Tetragonal distortion of InAsPSb film grown on InAs substrate studied by Rutherford backscattering/channeling and synchrotron X-ray diffraction”, Physica B 406,3219-21 (2011); as well as “Manganese K- and L3-edge X-ray Absorption Fine Structure Study of Zn1-xMnxTe”; “Study of MgXZn1-XO alloys (0<x<0.15) by X-ray absorption spectroscopy”, “3C-, 4H- and 6H-SiC bulks studied by Si K-edge X-ray absorption”, “Study of high indium InXGa1-XN alloys with synchrotron radiation”, “4H-SiC wafers studied by X-ray absorption and Raman scattering”, “Synchrotron Radiation X-ray Absorption and Optical Studies of Cubic SiC Films Grown on Si by Chemical Vapor Deposition”, “Structural Analysis of InxGa1-xN/GaN MQWs by Different Experimental Methods”, “Synchrotron Radiation high energy X-ray diffraction studies on sub-50nm Si-IC materials and wide gap semiconductors”. These are to be further studied penetrative. Some unsolved/challenging problems involved are raised, and hopeful to get hinds from discussion with expert audience and to develop good collaborative research which could lead to a penetrating/comprehensive knowledge and good understanding for these advanced materials studied.
[1] Zhe Chuan Feng ed., III-Nitride Devices and Nanoengineering (2008), III-Nitride Semiconductor Materials (2006), Imperia College Press, London. {Two new review books on III-Nitrides and LEDs are in editing}
[2] Zhe Chuan Feng ed., SiC Power Materials – Devices and Applications, Springer, Berlin, 2004.
[3] Zhe Chuan Feng ed., Handbook of Zinc Oxides and Related Materials: Vol. 1 Materials, Vol. 2 Devices and Nano-Engineering, CRC, Taylor & Francis, London/New York, 2012.

Brief Biography
Prof. Zhe Chuan FENG, received the BS (1968) and M.S. (1981) from Peking University, and Ph. D in University of Pittsburgh, 1987; worked at Emory University (1988-92), National University of Singapore (92-94), Georgia Tech (95, 2002-03), EMCORE Corporation (95-97), Institute of Materials Research & Engineering, Singapore (98-2001), and Axcel Photonics (2001-02), in all places with fruitful results and achievements. Since August 2003, Feng has joined National Taiwan University as a professor at Institute of Photonics and Optoelectronics & Department of Electrical Engineering, currently focusing on materials investigation (especially Raman/PL, surface science & synchrotron technology) and growth of wide gap semiconductors, III-Nitrides, SiC, ZnO, and III-V, II-VI, oxides and other nano-materials/devices.
He has published 9-review books on advanced compound semiconductors and microstructures, porous Si, SiC, III-Nitrides, ZnO. Feng has published >550 scientific papers with >220 recorded by Science Citation Index (SCI) and cited >2800 times. Feng had been a member of international organizing committee of Asia CVD, organizing committee of international conference for white LEDs and solid state lightings, and Board of Directors, Taiwan Association for Coating and Thin Film Technology (TACT), Guest professors at Nankai University, Tianjin Normal University, Huazhong University of Science & Technology, South China Normal University, Nanjing Tech University, Sichuan University. He has been awarded as the SPIE Fellow (2013), and is nominated for the Fellow of APS (American Physical Society).